3 collec t or 2 emitter 1 base r1 r2 bias resistor t ransistor pnp silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping k8 1 10 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. s-ldtb113zlt1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) ldtb113zlt1g s-ldtb113zlt3g 1 10 k8 parameter symbol v cc ? 50 ? 10 to + 5 ? 500 200 150 ? 55 to + 150 v v in v ma mw i c p d tj tstg unit c c limits supply voltage input voltage output current power dissipation junction temperature storage temperature parameter symbol v i(off) v i(on) v o(on) i i i o(off) r 1 g i r 2 /r 1 f t min. ? ? 3 ? ? ? 0.7 56 8 ? ? ? ? ? ? 1 ? 10 200 ? 0.3 ? ? 0.3 ? 7.2 ? 0.5 1.3 ? 12 ? v v cc = ? 5v, i o = ? 100 a v o = ? 0.3v, i o = ? 20ma i o /i i = ? 50ma/ ? 2.5ma v i = ? 5v v cc = ? 50v, v i =0v v o = ? 5v, i o = ? 50ma v ce = ? 10v , i e =50ma , f=100mhz v ma a k ? ? ?? ? mhz typ. max. unit conditions input voltage output voltage input current output current input resistance dc current gain resistance ratio transition frequency ? transition frequency of the device ? 1 2 3 sot-23 rev.o 1/3 ldtb113zlt1g ? s - prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ldtb113zlt1g ldtb113zlt3g
leshan radio company, ltd. z electrical ch aracteristic cu rv es ;s-ldtb113zlt1g v o = ? 0.3v input voltage : v i (on) ( v ) output current : i o ( a) -100m -200m -500m -1 -2 -10 -20 -5 -50 -100 -1m -500 -2m -5m -10m -20m -50m-100m-200m -500m fig.1 input voltage vs. output current (on characteristics) ta = ? 40 c 25 c 100 c -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 -10m -5m -2m -1m -500 -200 -100 -50 -20 -10 -5 -2 -1 v cc = ? 5v input voltage : v i (off) ( v) output current : io ( a) fig.2 output current vs. input voltage (off characteristics) ta=100 c 25 c ? 40 c v o = ? 5v dc current gain : g i output current : i o ( a) 1k 500 200 100 50 20 10 5 2 1 -1m -500 -2m -5m -10m -20m -50m-100m-200m -500m fig.3 dc current gain vs. output current ta=100 c 25 c ? 40 c l o /l i =20 -1 -500m -200m -100m -10m -50m -5m -20m -2m -1m output current : i o ( a) output voltage : v o (on) ( v) -1m -500 -2m -5m -10m -20m -50m-100m-200m -500m fig.4 output voltage vs. output current ta=100 c 25 c ? 40 c rev.o 2/3 ldtb113zlt1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3 ;s-ldtb113zlt1g ldtb113zlt1g
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